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Document Details
Document Type
:
Article In Journal
Document Title
:
The electrical characteristics of thin film transistors with graphene oxide and organic insulators
The electrical characteristics of thin film transistors with graphene oxide and organic insulators
Subject
:
physics
Document Language
:
English
Abstract
:
We have studied the electrical characteristics of nanographene oxide (n-GO) thin film transistor and n- GO organic thin film transistors with poly(methyl methacrylate) (PMMA) and poly-4-vinylphenol (PVP) as organic insulators. One of the alternate methods to prepare GO is achieved by oxidizing graphite via modified Hummers method. In this study, the GO was synthesized by a modified Hummers method. The graphene oxide thin films with PMMA and PVP were prepared by spin coating the precursor solution on a GO/SiO2 dielectrics bilayer. The graphene oxide thin film transistor was found to exhibit a high mobility of 0.375 cm(2)/V.s. This indicates that n-GO film has a more important effect to fabricate a high mobility n-GO thin film transistor than n-GO based thin film transistor with PMMA and PVP
ISSN
:
0379-6779
Journal Name
:
SYNTHETIC METALS
Volume
:
199
Issue Number
:
10
Publishing Year
:
1435 AH
2015 AD
Article Type
:
Article
Added Date
:
Tuesday, August 22, 2017
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
I Karter
Karter, I
Researcher
ibrahimkarteri@gmail.com
S Karatas
Karatas, S
Researcher
Doctorate
A.A Al-Ghamdi,
Al-Ghamdi, A.A
Researcher
Doctorate
F Yakuphanoglu
Yakuphanoglu, F
Researcher
Doctorate
Files
File Name
Type
Description
42736.pdf
pdf
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